| AVS 56th International Symposium & Exhibition | |
| Thin Film | Monday Sessions |
| Session TF1-MoM |
| Session: | Thin Films: Growth and Characterization I |
| Presenter: | J.T. Gudmundsson, University of Iceland |
| Authors: | F. Magnus, University of Iceland A.S. Ingason, University of Iceland S. Olafsson, University of Iceland J.T. Gudmundsson, University of Iceland |
| Correspondent: | Click to Email |
Ultrathin TiN films were grown by reactive dc magnetron sputtering on amorphous SiO2 substrates and single-crystalline MgO substrates at various growth temperatures. The resistance of the films was monitored in-situ during growth to determine the coalescence and continuity thicknesses. TiN films grown on SiO2 at 600°C are polycrystalline and have nominal coalescence and continuity thicknesses of 8 Å and 19 Å, respectively. TiN films grow epitaxially on the MgO substrates at 600°C. The nominal coalescence thickness is 2 Å and the thickness where the film becomes continuous cannot be resolved from the coalescence thickness. X-ray reflection measurements indicate a significantly higher density and lower roughness of the epitaxial TiN films.