Paper TF1-MoM2
Photoluminescence Properties of SrAl₂O₄:Eu²⁺,Dy³⁺ Thin Phosphor Films Grown by Pulsed Laser Deposition

Monday, November 9, 2009, 8:40 am, Room B3

Thin films of SrAl₂O₄:Eu²⁺,Dy³⁺ phosphor were grown on silicon substrates using a 248 nm KrF pulsed laser to evaluate the effects of different processing parameters on photoluminescence properties of the phosphor. The processing parameters which were varied during the films growth include temperature, pressure, and the number of pulses. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to examine the structure, particle morphology and surface topography of the films. The chemical composition and thicknesses of the films were determined by Rutherford backscattering spectroscopy (RBS). Photoluminescence spectra of the films recorded by the Cary Eclipse spectrophotometer were characterized by major green phosphorescent emission with a maximum at ~520 nm and minor red emission with a maximum at 630 nm. The green and red photoluminescence at 520 and 630 nm are associated with the 4f⁶5d→4f⁷(⁸S_7/2) and ⁵D₀-⁷F₂ transitions of Eu²⁺ and residual Eu³⁺ ions respectively. The effects of processing parameters on the PL intensity and the possible mechanism of the green phosphorescence were discussed.