| AVS 56th International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Aspects of Thin Films Poster Session |
| Presenter: | T. Hara, Kogakuin University, Japan |
| Authors: | T. Hara, Kogakuin University, Japan I. Takano, Kogakuin University, Japan |
| Correspondent: | Click to Email |
DLC (Diamond-like Carbon) classified in new materials is amorphous carbon including hydrogen and has the similar property to diamond. DLC film was formed by the ion beam evaporation method in the early 1970's and after that has been manufactured by various methods such as CVD (Chemical Vapor Deposition) or PVD (Physical Vapor Deposition). Because the representative mechanical property of DLC shows the high hardness and low friction coefficient, DLC is applied in various fie lds such as motor parts or tools. Also the electric property of DLC is anticipated as material of a field emission source.
In this study, mechanical properties were investigated about Si- doped DLC thin films prepared by using ion beam and electron beam evaporation in a C12H26 atmosphere . The formation of DLC thin films was performed by assist of He+ ion-beam irradiation in a C12H26 atmosphere and doping of Si into DLC was performed by electron beam evaporation. In this experiment, Si concentration in DLC was changed by control of an electron-beam evaporation source, while He+ ion beam was irradiated at a constant accelerating voltage of 5 kV with a current density of 20 μA/cm2. Film composition and microstructure were investigated by X-ray photoelectron spectroscopy and Raman spectroscopy. The hardness was measured from an indentation method with a Knoop indenter. The friction coefficient was measured for an SUJ2 ball with a constant load of 0.98 N until the sliding distance reached to a length of 100 m.
The improvement of mechanical properties for Si-doped DLC thin films was exhibited in this experiment. Knoop hardness of the DLC thin film with Si concentration of about 40 percent showed 8.2 GPa. Friction coefficient of the DLC thin film with Si concentration of about 24 percent showed 0.107 at sliding distance of 100 m. Each property corresponds to increase of about 46 percent in hardness and decrease of about 74 percent in friction coefficient as compared with un-doping DLC thin film prepared with an accelerating voltage of 5 kV at a current density of 20 μA/cm2.