AVS 56th International Symposium & Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP39
Fabrication and Characterization of Ink Jet Processed Organic Thin Film Transistors with Poly-4-Vinylphenol (PVP) Dielectric

Thursday, November 12, 2009, 6:00 pm, Room Hall 3

Session: Aspects of Thin Films Poster Session
Presenter: K.H. Eum, Sungkyunkwan University, Korea
Authors: K.H. Eum, Sungkyunkwan University, Korea
K.H. Kim, Sungkyunkwan University, Korea
Y.K. Son, Sungkyunkwan University, Korea
I.S. Chung, Sungkyunkwan University, Korea
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We fabricated organic thin film transistors (OTFTs) with a 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene as an active layer and cross-linked poly-4-vinylphenol (PVP) as a gate dielectric using ink-jet print. We used polyethersulphone (PES) as a substrate and Au as foe electrode. Prior to adopt PVP as a gate dielectric, PVP print condition was derived from metal-insulator-metal (MIM) structure by comparing with spin coating process in terms of leakage current, breakdown voltage and dielectric constant. The electrical properties were obtained using Keithley 4200 unit and Boonton 7200 capacitance meter. Additionally, the physical properties were also obtained using scanning probe microscopy SPM and scanning electron microscope (SEM).