AVS 56th International Symposium & Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP29
Damages to Fatigue and Retention Characteristics of BLT Capacitors Fabricated by Damascene Process with High-pressure Process

Thursday, November 12, 2009, 6:00 pm, Room Hall 3

Session: Aspects of Thin Films Poster Session
Presenter: W Lee, Chosun University, Korea
Authors: W Lee, Chosun University, Korea
S Shin, Chosun University, Korea
N. Kim, Chonnam National University, Korea
Correspondent: Click to Email
Damascene process of chemical mechanical polishing (CMP) process was proposed to fabricate the BLT ferroelectric capacitor instead of plasma etching process for the vertical profile without plasma damage. However, the authors also reported in the previous study that the electrical damages to leakage current and P-V characteristics of BLT capacitor induced by high-pressure process of damascene process although the high-pressure process had shown the better removal rate (high yield) and the sufficient surface characteristics including non-uniformity for BLT-CMP [1,2]. BLT thin films deposited on Pt/Ti/SiO2/Si substrate is well known to have good fatigue endurance and retention characteristics; however, the high-pressure process in damascene process of BLT degraded the fatigue behavior and retention characteristics. Therefore, the CMP pressure was controlled in damascene process for BLT capacitor although the yield and the surface characteristics became somewhat lower. Fatigue behavior and retention characteristics of BLT capacitor were recovered with the good P-V and leakage current characteristics. [1] N.-H. Kim, et al., Thin Solid Films, Vol. 515, Iss. 16, p. 6456 (2007), [2] N.-H. Kim, et al., Electronics Letters, Vol. 44, Iss. 24, p. 1429 (2008).