| AVS 56th International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Aspects of Thin Films Poster Session |
| Presenter: | W.T. Lin, Yuan-Ze University, Taiwan |
| Authors: | F.I. Lai, Yuan-Ze University, Taiwan W.T. Lin, Yuan-Ze University, Taiwan W.-C. Chen, National Applied Research Laboratories, Taiwan C.N. Hsiao, National Applied Research Laboratories, Taiwan S.Y. Kuo, Chang Gung University, Taiwan Y.K. Liu, Chung Yuan Christian University, Taiwan J.L. Shen, Chung Yuan Christian University, Taiwan |
| Correspondent: | Click to Email |
In this paper, we report the studies on the hetero-epitaxial growth of wurtzite indium nitride ( InN ) thin films on oxide buffer layer by plasma-assisted chemical beam epitaxy (CBE) system with different III/V ratios. Oxide buffer layer was pre-sputtered using RF sputtering technique before InN deposition. The structural and optical properties of InN films samples were investigated by x-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) and temperature-dependence photoluminescence (PL) measurements. The near-infrared emission peak values of samples were between 0.74 and 0.78 eV, which are higher than those pre-reported values explained by the Moss-Burstein effect. While increasing the III/V ratio, the emission PL peak red-shifted. In addition, the temperature-dependence PL spectra exhibit blue-shifted as the measurement temperature increased. We suggest that the blue shift in PL spectra with temperature may result from the variation in concentration of InN films.