AVS 56th International Symposium & Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP19
Effect of Silicon Content on the Resistivity of Tungsten Silicon Film

Thursday, November 12, 2009, 6:00 pm, Room Hall 3

Session: Aspects of Thin Films Poster Session
Presenter: C. Lo, Praxair Electronics
Authors: C. Lo, Praxair Electronics
D. Draper, Praxair Electronics
P. McDonald, Praxair Electronics
R. Mathew, Praxair Electronics
Correspondent: Click to Email
Tungsten (W) –silicon (Si) alloy has been used for many applications in the semiconductor. Resistance layer is one of the applications. In this study, five sputtering targets with composition ranged from WSi1.6 (W- 20wt% Si) to WSi4 (W- 38wt% Si) have been prepared. By controlling the sputtering power and Argon (Ar) gas pressure, the film resistivity as a function of target composition and sputtering parameters has been established. The results are able to provide helpful information to the alloy design of WSi for new thin film applications.