AVS 56th International Symposium & Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP10
Fabrication of Gallium Oxide Films using Ion-Beam Assisted Deposition

Thursday, November 12, 2009, 6:00 pm, Room Hall 3

Session: Aspects of Thin Films Poster Session
Presenter: T. Ichinohe, Tokyo National College of Technology, Japan
Authors: T. Ichinohe, Tokyo National College of Technology, Japan
M. Ohshima, TDY Inc., Japan
S. Masaki, TDY Inc., Japan
T. Kawasaki, TDY Inc., Japan
M. Obinata, TOHNIC Inc., Japan
S. Takeda, Nippon Light Metal Company, Ltd., Japan
H. Hino, Nippon Light Metal Company, Ltd., Japan
Correspondent: Click to Email
Gallium oxide (β-Ga2O3) has been known to be one of transparent conductive oxides, being tin doped. In this study, gallium oxide films were fabricated by ion-beam assisted deposition. Oxygen ions accelerated at 70-200 eV were employed during deposition. According to X-ray diffraction (XRD) analyses, the as-grown films being amorphous, polycrystalline β-Ga2O3 was formed after heat-treatment over 500°C in nitrogen gas ambient. The films assisted in high energy ions tend to show sharp XRD peaks after heat-treatment. The films containing SnO2 after heat-treatment at higher temperature (900°C) showed the same crystal structure although the peaks broaden. The ion-beam assisted films after heat-treatment showed high transparency from UV to near IR region.