| AVS 56th International Symposium & Exhibition | |
| Surface Science | Tuesday Sessions |
| Session SS1+PS+TF+AS+NS-TuA |
| Session: | Non-Thermal Chemistry / Ion, Electron Processes |
| Presenter: | T.M. Orlando, Georgia Institute of Technology |
| Authors: | T.M. Orlando, Georgia Institute of Technology D. Sokolov, Georgia Institute of Technology D. Oh, Georgia Institute of Technology K. Shepperd, Georgia Institute of Technology |
| Correspondent: | Click to Email |
The physics and chemistry associated with desorption induced by electronic transitions, particularly electron stimulated desorption (ESD), is the basis for many electron-beam induced processes in materials growth, etching, and lithography. We have demonstrated experimentally and theoretically that the total ESD yield of adsorbates can be a function of the incident low-energy electron-beam direction. We refer to this phenomena as Diffraction in Electron Stimulated Desorption (DESD). We have also explored three graphene growth strategies which utilize low-energy electron beams and non-thermal reactions. The first uses electron beam irradiation in conjunction with chemical vapor deposition techniques to grow graphene directly on Si substrates. This approach utilizes unsaturated hydrocarbon precursor molecules and can be carried out at relatively low temperatures. The second involves electron-stimulated removal of oxygen and organic fragments from graphene-oxide flakes positioned on patterned Si substrates. This may allow for damage-free reduction of graphene-oxide to graphene. The third involves electron-beam removal of defects from graphene expitaxially grown from SiC(0001) substrates.