AVS 56th International Symposium & Exhibition
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP25
Three-dimensionally Suspended Single-Walled Carbon Nanotubes Inside the Holes of Porous Silicon

Tuesday, November 10, 2009, 6:00 pm, Room Hall 3

Session: Nanometer-scale Science and Technology Poster Session
Presenter: W. Yi, Hanyang University, Korea
Authors: W. Yi, Hanyang University, Korea
D. Lee, Hanyang University, Korea
J. Lee, Hanyang University, Korea
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Carbon nanotubes (CNTs) were synthesized inside the holes of the porous silicon substrate by thermal decomposition of C2H2. Secondary electron microscopy (SEM) and Raman analysis revealed that single-walled carbon nanotubes (SWNTs) were suspended with three-dimensional networks (3-dim suspended SWNTs). Field emission measurements of those samples showed the enhanced turn-on voltage and emission property compared with pristine SWNT film. We also measured the photoconductivity of 3-dim suspended SWNTs under irradiation of infrared light after making two electrodes on the sample surface. The on/off ratio of resistivity, i.e. the resistance ratio under and without IR irradiation reached up to ~600 enough to be used as commercial IR sensors.