AVS 56th International Symposium & Exhibition
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP21
Silicidation Behaviors of Si1-xGex Nanowires for Future CMOS Device

Tuesday, November 10, 2009, 6:00 pm, Room Hall 3

Session: Nanometer-scale Science and Technology Poster Session
Presenter: S.W. Kim, Yonsei University, Korea
Authors: S.W. Kim, Yonsei University, Korea
S.Y. Kim, Yonsei University, Korea
D.-H. Ko, Yonsei University, Korea
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To overcome the scaling down issues in current semiconductor industry, scientists and engineers have been investigating the alternatives in the last few years. One of the methods is a semiconductor nanowires. They have been received remarkable attentions during the past years due to their potential application for future CMOS devices. Compared to other semiconductor nanowires, Si & Si1-xGex nanowires are more important as for the base-materials of future CMOS devices because of their special merits of being compatible with current silicon device fabrication processes. In addition, Si & Si1-xGex nanowires are suitable candidates for investigating characteristics associated with quantum size effects. For the application to the future nano-scale device process, we investigated the silicidation behavior of Si1-xGex nanowires. Si1-xGex nanowires were grown in a LPCVD by VLS method. SiH4 and GeH4 were used as a precursor sources for growing Si1-xGex nanowires on Si (111) substrates. Thin gold layer was deposited as a catalyst, and Ge contents of Si1-xGex nanowires were controlled to 15% and 30%. Ni layer was deposited on the as-grown nanowires by sputtering and RTP process was used for silicidation. The characteristics of Ni germanosilicide films on nanowires were investigated by using TEM and EDS methods. Also, electrical characteristics were measured by using patterned electrodes. Comparing the silicidation characteristics of Si1-xGex nanowires with those of Si nanowires, it is concluded that Ge plays a significant role to determine silicidation characteristics.