| AVS 56th International Symposium & Exhibition | |
| MEMS and NEMS | Thursday Sessions |
| Session MN+GR-ThM |
| Session: | Graphene and Carbon Based MEMS/NEMS Devices |
| Presenter: | A.V. Sumant, Argonne National Laboratory |
| Authors: | A.V. Sumant, Argonne National Laboratory L.E. Ocola, Argonne National Laboratory X.P. Wang, University of Puerto Rico D.O. Lopez, Argonne National Laboratory O.H. Auciello, Argonne National Laboratory D.C. Mancini, Argonne National Laboratory |
| Correspondent: | Click to Email |
Recently, there is tremendous amount of interest in making diamond nanowires (DNWs) and diamond nano-rods (DNRs), due to their extraordinary mechanical, electrical, and optical properties as predicated by theory, however, synthesizing or fabricating these quasi1-dimensional sp3 nanostructures is proved to be very challenging. To date, only few attempts have been reported either by etching single crystal diamond from top-down process to produce diamond nano-rods (DNRs) or by coating Si nanowires with nanocrystalline diamond. We report a method based on e-beam lithography and reactive ion etching of ultrananocrystalline diamond (UNCD), to produce UNCD nanowires (UNCDNWs) and UNCD nano-rods (UNCDNRs) with nanowire diameter as small as 20 nm. Since they are produced by lithographic approach, they can be fabricated almost at will in well defined position with nanometer scale precision. We have fabricated Nitrogen doped UNCDNWs and characterized them using Raman spectroscopy (UV and visible) and TEM microscopy. We will discuss about preliminary nanostructural studies of UNCDNWs and electrical measurements. The ability to fabricate UNCDNWs and UNCDNRs gives an opportunity to study fundamental mechanism of transport processes in diamond nanowires, which will enable new ideas and possibility of fabricating new functional nanoelectronic devices and sensors with increased sensitivity for a variety of applications in nanotechnology.