AVS 56th International Symposium & Exhibition | |
Graphene Topical Conference | Monday Sessions |
Session GR+SS-MoA |
Session: | Epitaxial Graphene on SiC |
Presenter: | E. Rotenberg, Lawrence Berkeley National Laboratory |
Correspondent: | Click to Email |
Epitaxially grown graphene films with various adsorbates have been prepared and investigated using angle-resolved photoemission spectroscopy (ARPES). Two regimes have been studied, which are differentiated by whether the adsorbates preserve the local symmetry of the graphene unit cell or not. For symmetry-preserving defects, such as adsorbed K or Ca atoms, the charge carriers in the graphene retain their metallic, Fermi liquid character, i.e. they can be described as single, weakly interacting “quasiparticles” with a relatively long lifetime as their energy approaches the Fermi level. (This is in contrast to strongly correlated systems where electron-electron scattering dominates the low energy dynamics) In such samples, ARPES measurements of the valence band can determine details of many-body interactions such as electron-phonon coupling. The second regime is followed by adsorbed atomic H atoms, which break the local lattice symmetry, and, for sufficiently high density, cause a dramatic breakdown in the quasiparticle picture, as evidenced by changes to the valence band spectrum. This, together with an accompanying metal-to-insulator transition, suggests that atomic H localizes the carriers, as described by Anderson’s theory.
*in collaboration with A. Bostwick, J. L. McChesney, T. Ohta, [LBNL], S. D. Kevan,[U. Oregon] K. V. Emtsev, Th. Seyller [U. Erlangen], and K. Horn [Fritz-Haber Institute]