| AVS 56th International Symposium & Exhibition | |
| Graphene Topical Conference | Monday Sessions |
| Session GR+SS-MoA |
| Session: | Epitaxial Graphene on SiC |
| Presenter: | J.-H. Chen, University of Maryland, College Park |
| Authors: | J.-H. Chen, University of Maryland, College Park W Cullen, University of Maryland, College Park C. Jang, University of Maryland, College Park M. Fuhrer, University of Maryland, College Park E. Williams, University of Maryland, College Park |
| Correspondent: | Click to Email |
We have measured the effect of low energy charged particle irradiation on the electronic transport properties of clean graphene devices. Irradiation of graphene by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is four times larger than for a similar concentration of singly charged impurities. The minimum conductivity decreases proportional to the mobility to values lower than 4e2/πh, the minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a diverging resistivity at low temperature, indicating insulating behavior. The results are best explained by ion-induced formation of lattice defects that result in mid-gap states.