AVS 56th International Symposium & Exhibition | |
Graphene Topical Conference | Monday Sessions |
Session GR+SS-MoA |
Session: | Epitaxial Graphene on SiC |
Presenter: | M. Cerruti, UC Berkeley |
Authors: | M. Cerruti, UC Berkeley N. Ferralis, UC Berkeley R. Maboudian, UC Berkeley C. Carraro, UC Berkeley |
Correspondent: | Click to Email |
Metallization of graphene surfaces are of crucial importance for the fabrication of metal-graphene contacts, and for surface functionalization via metallic nanostructures. In this paper, a novel method of selective deposition of Au clusters on graphene layers grown epitaxially on SiC substrate is presented. The size and the distribution of particles is regulated and fully controlled by the deposition process. From a combined use of scanning electron microscopy, x-ray electron spectroscopy and Raman microscopy, we propose that cluster nucleation takes place at the edges and defects in graphene domains, via oxidation of defects sites. The preferred nucleation indicates that a high level of selectivity is achieved by controlling the quality of the graphene film.