| AVS 56th International Symposium & Exhibition | |
| Graphene Topical Conference | Wednesday Sessions |
| Session GR+MI-WeM |
| Session: | Spins in Graphene: Injection and Manipulation |
| Presenter: | S.Y. Jung, NIST and University of Maryland, College Park |
| Authors: | S.Y. Jung, NIST and University of Maryland, College Park N.N. Klimov, NIST and University of Maryland, College Park J.A. Stroscio, National Institute of Standards and Technology D.B. Newell, National Institute of Standards and Technology N.B. Zhitenev, National Institute of Standards and Technology |
| Correspondent: | Click to Email |
High carrier mobility and long coherence lengths are one of the main attributes which have attracted so much attention to graphene as a new electronic material. Recent studies have shown that the mobility in graphene is extremely sensitive to disorder, particularly coming from substrate interactions [1]. Substrate interactions can be minimized or possibility eliminated by fabricating suspended graphene devices [2]. In this presentation, we present results where we systematically study the quantum Hall effect in suspended graphene devices varying device geometry and disorder. Suspended graphene devices allow for a broad range of particular realizations of the disorder potential. Magnetotransport properties are investigated at various temperatures and with respect to the influence of current annealing. Device geometries with two- and four-probe terminals and different aspect ratios are compared and the effects of disorder potential modifications are discussed.
[1]. J. Martin et al, Nature Phys. 4, 144 (2008).
[2]. K. I. Bolotin et al, Phys. Rev. Lett. 101, 096802 (2008).