AVS 56th International Symposium & Exhibition
    Electronic Materials and Processing Wednesday Sessions
       Session EM-WeA

Paper EM-WeA11
Au-Al0.27Ga0.73N Shottky Barrier Formation and Charge Carrier Mobility Estimation

Wednesday, November 11, 2009, 5:20 pm, Room B1

Session: Contacts, Interfaces, and Defects in Semiconductors
Presenter: S. McHale, Air Force Institute of Technology
Authors: S. McHale, Air Force Institute of Technology
Ya. Losovyj, Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln and J. Bennett Johnston Sr. Center for Advanced Microstructures and Devi
D. Wooten, Air Force Institute of Technology
J. McClory, Air Force Institute of Technology
J. Petrosky, Air Force Institute of Technology
Correspondent: Click to Email
Au-AlGaN Shottky barrier formation is observed using Au evaporation on an Al0.27Ga0.73N strained Wurtzite structure, thin film that is deposited on GaN. Low Energy Electron Diffraction was performed to verify the integrity of the Au deposition. Energy dependent, synchrotron generated photoemission spectroscopy ranging from 15 to26 eV under UHV conditions clearly determines a Fermi edge shift of up to 0.5 eV. Charge carrier mobility is inferred using valence band mobility edge data.