AVS 56th International Symposium & Exhibition
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuP

Paper EM-TuP22
High-density Chalcogenide Nanostructure Arrays Fabricated by Self-aligned and Maskless Process with Modified Nanosphere Lithography

Tuesday, November 10, 2009, 6:00 pm, Room Hall 3

Session: Electronic Materials and Processing Poster Session
Presenter: N. Kim, Chonnam National University, Korea
Authors: N. Kim, Chonnam National University, Korea
H. Yang, Chonnam National University, Korea
H. Lee, Chonnam National University, Korea
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Phase change random access memory (PRAM) was concerned about one of the strongest candidate of non-volatile memory although the fabrication of PRAM has encountered the technical limitations by plasma process induced damage at sub-100 nm sizes. Novel approaches have been attempted to realize the reliability and utilization with a cost-effective production for high-density phase change memories. Nanosphere lithography (NSL) is one of the most useful techniques for the formation of close-packed periodic nanostructures. Polystyrene nanospheres of 500 nm-diameter were arrayed orderly on the photoresist (PR)-covered bottom electrode after dipping the samples into the developer solution for a few seconds to make the PR surface hydrophilic enough. The polystyrene nanospheres-arrayed samples were exposed. Then, polystyrene nanospheres were removed by DI water in an ultrasonic bath before development of PR. The average diameter of holes was about 100 nm. Ge2Sb2Te5 (GST) was subsequently deposited into the periodic nanoholes, and then PR was lifted-off. High-density chalcogenide arrays were simply and successfully established by the self-aligned and maskless process of NSL. Acknowledgement: This work was supported by Korea Research Foundation Grant (KRF-2007-412-J02003).