AVS 56th International Symposium & Exhibition
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuP

Paper EM-TuP15
Microstructural Analysis and Luminescent Study of Thin Film Zinc Germanate Doped with Manganese

Tuesday, November 10, 2009, 6:00 pm, Room Hall 3

Session: Electronic Materials and Processing Poster Session
Presenter: J.H. Kim, Chungbuk National University, Korea
Authors: K.H. Yoon, Chungbuk National University, Korea
J.H. Kim, Chungbuk National University, Korea
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Thin films of zinc germanate doped with manganese (Zn2GeO4:Mn) were fabricated by radio frequency planar magnetron sputtering, and their microstructural characteristics and luminescent properties were studied. X-ray diffraction measurements showed that the as-deposited Zn2GeO4:Mn films were of amorphous structure in nature. Field emission scanning electron microscopy and grazing incidence x-ray reflectivity analyses revealed that the Zn2GeO4:Mn films had a smooth surface morphology. The Zn2GeO4:Mn films exhibited a high optical transparency in the visible wavelength region with the peak transmittance of 0.926, which is very close to the transmittance of the quartz substrate alone. The Zn2GeO4:Mn films became crystalline by the post-deposition annealing above 700 °C in air and the annealed films possessed a rhombohedral polycrystalline structure with a random crystallographic orientation of grains. The broad-band photoluminescence (PL) and cathodoluminescence (CL) emission spectra were obtained from the annealed films. The emission extends from 470 to 650 nm with a maximum at around 535 nm in the green range, which is accounted for by the intrashell transition of 3d5 electrons from the 4T1 excited-state level to the 6A1 ground state in the divalent manganese ions.