AVS 56th International Symposium & Exhibition
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuA

Paper EM-TuA7
Arsenic-dominated Chemistry in the Acid Cleaning of InGaAs and InAlAs Surfaces

Tuesday, November 10, 2009, 4:00 pm, Room B1

Session: High-K Dielectrics on High Mobility Substrates
Presenter: Y. Sun, Stanford Synchrotron Radiation Lightsource
Authors: Y. Sun, Stanford Synchrotron Radiation Lightsource
P. Chen, Stanford University
M. Kobayashi, Stanford University
Y. Nishi, Stanford University
N. Goel, Intel Corp.
M. Garner, Intel Corp.
W. Tsai, Intel Corp.
P. Pianetta, Stanford Synchrotron Radiation Lightsource
Correspondent: Click to Email
The surface cleaning of InGaAs and InAlAs is studied using Synchrotron Radiation Photoelectron Spectroscopy. Thermal annealing at 400oC can not completely remove the native oxides from those surfaces. Elemental arsenic build-up is observed on both surfaces after acid treatment using HCl, HF or H2SO4 solutions, which is similar to acid-cleaned GaAs surface. Cleaned InGaAs surface is oxide free but small amount of aluminum oxide remains on cleaned InAlAs surface. The common chemical reactions between III-As semiconductors and acid solutions are identified and are found to be dominated by arsenic chemistry.