| AVS 55th International Symposium & Exhibition | |
| Plasma Science and Technology | Tuesday Sessions |
| Session PS-TuP |
| Session: | Plasma Science Poster Session |
| Presenter: | C.S. Moon, Nagoya University, Japan |
| Authors: | C.S. Moon, Nagoya University, Japan K. Takeda, Nagoya University, Japan M. Sekine, Nagoya University and Japan Society of Technology Agency M. Hori, Nagoya University and Japan Society of Technology Agency Y. Setsuhara, Osaka University and Japan Society of Technology Agency M. Shiratani, Kyushu University and Japan Society of Technology Agency |
| Correspondent: | Click to Email |
Plasma etching technology is one of technologies, which have been in charge of semiconductor device industry. As it is scaled down to several tens of nanometers, the sophisticated plasma parameter control has been indispensable to achieve the process requirements. However, up to now, it was an obvious fact that a lot of trials and errors have been carried out in the development of plasma etching process by external parameters such as input power or working pressure, since there has never been the any scientific guiding principle based on plasma science. We hereby propose the development of process map called Plasma Nano Science. However, as the enormous database is necessary to establish the process map, it is difficult by conventional unit process capable of obtaining one result by one trial. At this moment, we have newly developed the combinatorial plasma process apparatus for etching of organic low-k dielectric film, which enables to acquire many results by just one experiment. Desktop-typed combinatorial plasma apparatus was realized by capacitively coupled plasma source consisted of top electrode (13.56MHz) with the diameter of 10 mm and bottom electrode (2MHz) with that of 40 mm. Process gases of hydrogen and nitrogen were used for etching organic low-k dielectric film. Optical emission intensity of combinatorial plasma was investigated by ICCD camera and we could confirm the formation of intentional non-uniform plasma with gradient on the bottom electrode. The spatial distributions of H and N radical densities were measured by compact vacuum ultraviolet absorption spectroscopy (VUVAS) system designed and developed by our group1 and the etching characteristics of combinatorial plasma process were interpreted by radical density. As a result, impact of combinatorial plasma process on the development of organic low-k dielectric film etching in terms of internal parameters was confirmed for the first time. The combinatorial plasma process will open a new avenue for the establishment of plasma nano science.
1S. Takashima, M. Hori, T. Goto, A. Kono, M. Ito and K. Yoneda, Appl. Phys. Lett. 75, 3929 (1999).