| AVS 53rd International Symposium | |
| Electronic Materials and Processing | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | EM-WeM1 Growth of GaP on Nanoscopically Roughened (001)Si I.K. Kim, X. Liu, D.E. Aspnes, North Carolina State University |
| 8:20am | EM-WeM2 Formation and Ordering of Ga Droplets Using a Focused Ion Beam W. Ye, B.L. Cardozo, University of Michigan, X. Weng, Penn State University, J.F. Mansfield, R.S. Goldman, University of Michigan |
| 8:40am | EM-WeM3 Invited Paper Advances in THz Microelectronics M.C. Wanke, Sandia National Laboratories |
| 9:20am | EM-WeM5 Invited Paper Recent Development of THz Wave Generation, Detection and Applications* X.-C. Zhang, Rensselaer Polytechnic Institute |
| 10:40am | EM-WeM9 Influence of Nitrogen Incorporation on Electron Transport in Selectively Doped GaAsN/AlGaAs Heterostructures Y. Jin, M. Reason, X. Bai, H.A. McKay, C. Kurdak, R.S. Goldman, University of Michigan |
| 11:00am | EM-WeM10 Invited Paper Atomic Scale Morphology, Growth Behaviour and Thin Film Properties of Ga(In)NAs Quantum Wells T.S. Jones, W.M. McGee, R.S. Williams, T.J. Krzyzewski, M.J. Ashwin, Imperial College London, UK, C.P.A. Mulcahy, Cascade Scientific Ltd, UK |
| 11:40am | EM-WeM12 In-Situ Investigation of Surface Stoichiometry During YMnO@sub 3@, InGaN and GaN Growth by Plasma-Assisted Molecular Beam Epitaxy Using RHEED-TRAXS R.P. Tompkins, E.D. Schires, K. Lee, Y. Chye, D. Lederman, T.H. Myers, West Virginia University |
| 12:00pm | EM-WeM13 Surface Electron Accumulation in Indium Nitride Layers Grown by High Pressure Chemical Vapor Deposition R.P. Bhatta, B.D. Thoms, A. Weerasekera, A.G.U. Perera, M. Alevli, N. Dietz, Georgia State University |