AVS 53rd International Symposium
    Thin Film Thursday Sessions
       Session TF1-ThA

Paper TF1-ThA3
Field Emission Performance in Various Vacuum Conditions and Multistage Field Enhancement Effect of Tungsten Oxide Nanowires

Thursday, November 16, 2006, 2:40 pm, Room 2020

Session: Field Emission
Presenter: R. Seelaboyina, Florida International University
Authors: R. Seelaboyina, Florida International University
J. Huang, Florida International University
D. Kang, Samsung Advanced Institute of Technology, Korea
J. Park, Samsung Advanced Institute of Technology, Korea
W.B. Choi, Florida International University
Correspondent: Click to Email
We report on the field emission properties of tungsten oxide nanowires grown on a tungsten tip and its emission performance in various vacuum conditions. Tungsten oxide (W@sub 18@O@sub 49@) nanowires were grown by thermal chemical vapor deposition in a mixture of CH@sub 4@ and H@sub 2@ on an electrochemically sharpened tungsten tip. The field emission measurements showed a low turn-on field of ~0.9 V/µm, high emission current of 170 mA and a large field enhancement factor of ~19800. The high field emission current is attributed to the multi stage field enhancement of the two-stage emitter geometry. High emission current of a few µA was also observed in relatively poor vacuum of 3x10 @super -3@ Torr, and the emission properties were recovered at 1x10 @super -6@ Torr after measurements under poor vacuum.