AVS 53rd International Symposium
    Thin Film Wednesday Sessions
       Session TF-WeA

Paper TF-WeA4
Growth and Characterization of In@sub x@Ga@sub 1-x@N (0 @<=@ x @<=@ 1) Thin Films Grown by MOCVD for Photovoltaic Applications

Wednesday, November 15, 2006, 3:00 pm, Room 2022

Session: Thin Films for Energy Applications in Photovoltaics, Fuel Cells, Hydrogen Storage & Batteries
Presenter: J. Mangum, University of Florida
Authors: J. Mangum, University of Florida
O. Kryliouk, University of Florida
A. Davydov, National Institute of Standards and Technology
T.J. Anderson, University of Florida
Correspondent: Click to Email
Recently the electronic band gap of indium nitride (InN) has been revealed to be 0.7 eV in marked contrast to the previously accepted value of ~2.1 eV. By varying the band gap of InN with the incorporation of gallium to form In@sub x@Ga@sub 1-x@N, the optimal band gap energy for either a single cell or tandem cell combination is possible. Furthermore, the high absorption coefficient and radiation hardness make InN and In@sub x@Ga@sub 1-x@N attractive materials for photovoltaics. In@sub x@Ga@sub 1-x@N films on Si (111) and Al@sub 2@O@sub 3@ (0001) substrates were grown by metal organic chemical vapor deposition (MOCVD) at low temperatures (T < 600 @super o@C) over the entire compositional range (0 @<=@ x @<=@ 1). The lattice parameter was determined from XRD measurements of the as-grown films. The films were also characterized by PL, SEM, and Hall measurements. An In@sub x@Ga@sub 1-x@N based solar cell device structure is proposed that is assessed by device modeling as well! as quantum efficiency measurements.