AVS 53rd International Symposium
    Thin Film Tuesday Sessions
       Session TF-TuM

Paper TF-TuM9
The Surface States of MgO Thin Films Deposited with a Flow of Gases by e-beam Evaporation

Tuesday, November 14, 2006, 10:40 am, Room 2022

Session: Materials for Flexible Substrates, Displays, and Optoelectronics
Presenter: T.W. Heo, Seoul National University, South Korea
Authors: T.W. Heo, Seoul National University, South Korea
S.H. Moon, Seoul National University, South Korea
S.Y. Park, Seoul National University, South Korea
J.H. Kim, Seoul National University, South Korea
H.J. Kim, Seoul National University, South Korea
Correspondent: Click to Email
MgO thin film plays important roles in AC-Plasma Display Panels: the emission of the secondary electrons and protecting the dielectric layer against the ionized ions. Especially the secondary electron emission coefficient becomes more important recently.@footnote 1,2@ However, the secondary electron emission coefficient should be strongly related to the surface state of MgO thin film: only several nanometers of the surface might be the important part to determine the secondary electron emission coefficient. In addition, the density of states (DOS) of the valence band is one of key parameters, which can explain the mechanism of the secondary electron emission. Because, the two electrons involved have energies initially at two levels in the valence band.@footnote 3@ It is known that during e-beam evaporation the addition of gas improved the electrical property of MgO thin film depending on the kind of the gas. But the reasons for that are not clearly understood. MgO thin films were deposited with a flow of O@sub 2@, N@sub 2@ and H@sub 2@ gases by e-beam evaporator. The deposited MgO thin films were investigated by XPS and SEM. Discharging characteristics was also determined. To evaluate the discharging characteristics, 2-inch test panels were fabricated. MgO film deposited with O@sub 2@ flow shows the most dense microstructure(on the SEM image) and the highest density of states of the valence band(on the XPS spectra) as well as the lowest discharging voltage. The discharging voltages of panel that have MgO film deposited with O@sub 2@ flow are lower than those of panels with other gases flows by 4~5 V. The discussion about the reason for the improvement will be discussed in the presentation. @FootnoteText@ @footnote 1@H. Uchiike et al., IEEE Trans. Elec. Dev., ED-23 1211 (1976). @footnote 2@ T. J. Vink et al., Appl. Phy. Lett., 80 (12), 2216 (2002). @footnote 3@Homer D. Hagstrum, Phy. Rev., vol.122, no.1, 83 (1961) .