AVS 53rd International Symposium
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP6
Real Time Monitoring of Plasma-less Vacuum Process using Self -Plasma Optical Emission Spectroscopy (SP-OES)

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Thin Film Poster Session
Presenter: S.-H. Han, Samsung Electronic Co. Ltd., Korea
Authors: S.-H. Han, Samsung Electronic Co. Ltd., Korea
D. Lee, Samsung Electronic Co. Ltd., Korea
S.W. Hwang, Samsung Electronic Co. Ltd., Korea
Y. Kim, Samsung Electronic Co. Ltd., Korea
C. Shin, Samsung Electronic Co. Ltd., Korea
C.-J. Kang, Samsung Electronic Co. Ltd., Korea
H. Cho, Samsung Electronic Co. Ltd., Korea
J.-T. Moon, Samsung Electronic Co. Ltd., Korea
Correspondent: Click to Email
As the semiconductor devices shrink, degradation of device characteristics caused by plasma damage, such as charge-up and UV exposure becomes more severe. To dissolve this kind of process damage issue, a plasma-less process in a process chamber has been recently introduced for semiconductor fabrication. On the purpose of monitoring this kind of plasma-less processes, there has been studied self plasma optical emission spectroscopy (SP-OES), which is installed at pumping line and generates plasma using a small discharge cell. The emission spectra from the cell discharge plasma are analyzed to give the information on the process change in the plasma-less vacuum process chamber. By using SP-OES, it was possible to monitor the change of process behavior such as a reaction mechanism and end point detection (EPD) for which, till lately, there were no proper real-time monitoring tools for plasma-less process. Additionally, we have confirmed a possibility of monitoring process drift over wafer to wafer as a function of fault detection and classification (FDC) tool.