AVS 53rd International Symposium
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP3
Characterization of ZnO-In@sub 2@O@sub 3@/ZnO Laminated Thin Films Prepared by Pulsed Laser Deposition

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Thin Film Poster Session
Presenter: T. Moriga, The University of Tokushima, Japan
Authors: T. Moriga, The University of Tokushima, Japan
K. Ishida, The University of Tokushima, Japan
A. Taki, The University of Tokushima, Japan
H. Ohno, The University of Tokushima, Japan
Y. Sakakibara, The University of Tokushima, Japan
K. Murai, The University of Tokushima, Japan
M. Mikawa, Takuma National College of Technology, Japan
K. Tominaga, The University of Tokushima, Japan
Correspondent: Click to Email
It is well-known that zinc oxide thin film is easy to be deposited as a crystalline wurtzite-type structure. However, heavy doping of indium in zinc oxide (~10%) led the films to be poor crystallized. When single-crystalline sapphire substrates were used instead of glass substrates, the significant reduction of resistivity and improvement of crystallinity were observed in the zinc-rich ZnO- In@sub 2@O@sub 3@ films. In this study, we deposited the zinc-rich ZnO- In@sub 2@O@sub 3@ film over crystalline ZnO film on a glass substrate, that is, ZnO-In@sub 2@O@sub 3@/ZnO laminated thin film on a glass substrate, to improve the electrical properties. Thin films were deposited on a Corning 1737 glass substrate by pulsed laser deposition using a KrF excimer laser beam with a laser fluence of 2J/cm@super 2@. The targets were pellets of a mixture composed of ZnO and In@sub 2@O@sub 3@ powder, which were sintered at 1000°C for 1 hour. The base pressure in the chamber was of the order of 10@super -6@ Torr, and pure oxygen gas was introduced into the chamber with a flow rate of 30ccm during the deposition. The shot numbers for depositions were 10000 for a buffer film and 30000 for a major film on the buffer. At the substrate temperature of 380°C, we could deposit the ZnO-In@sub 2@O@sub 3@ layer over ZnO layer as a buffer layer on the glass substrate. When the composition reached x=0.90 in xZnO-(1-x) In@sub 2@O@sub 3@, the overall resistivity of the 0.90ZnO-0.10 In@sub 2@O@sub 3@/ZnO bilayer film was remarkably improved by one order magnitude, compared with that of the single 0.90ZnO-0.10 In@sub 2@O@sub 3@ film on the glass substrate. Simultaneously, the diffraction intensity assigned to the 0.90ZnO-0.10 In@sub 2@O@sub 3@ phase in the bilayer film increased significantly, resulting from improvement of crystallinity of the phase.