AVS 53rd International Symposium
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP10
Pb(Zr,Ti)O3 Thin Film Capacitors by Damascene Process : Fabrication and Characterization

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Thin Film Poster Session
Presenter: P.J. Ko, Chosun University, Korea
Authors: P.J. Ko, Chosun University, Korea
N.H. Kim, Chosun University, Korea
W.-S. Lee, Chosun University, Korea
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The ferroelectric materials of the PZT, SBT and BLT attracted much attention for application to ferroelectric random access memory (FRAM) devices. Through the last decade, the lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for the ferroelectric products due to its higher remanant polarization and the ability to withstand higher coercive fields. FRAM has been currently receiving increasing attention for one of future memory devices due to its ideal memory properties such as non-volatility, high charge storage, and faster switching operations. In this study, we first applied the damascene process using chemical mechanical polishing (CMP) to the fabricate the PZT thin film capacitor in order to solve the problems of plasma etching such as low etching profile and ion charging. The structural characteristics were compared with specimens before and after CMP process of PZT films. The P-E characteristics of PZT capacitors were examined at various voltages and room temperature. The properties of PZT capacitor were Current-voltage characteristics (I-V) and capacitance-voltage (C-V) measured with RT66A. The densification by the vertical sidewall patterning and charging-free ferroelectric capacitor could be obtained by the damascene process without remarkable difference of the characteristics. Acknowledgement: This work was supported by Korea Research Foundation Grant (KRF-2004-005-D00007).