AVS 53rd International Symposium
    Surface Science Wednesday Sessions
       Session SS2+EM-WeA

Paper SS2+EM-WeA9
Controlled Self-Organization of Nanodots at Organic p-n Heterojunctions

Wednesday, November 15, 2006, 4:40 pm, Room 2004

Session: Organic Film Growth and Characterization
Presenter: D.G. de Oteyza, Max-Planck-Institut fuer Metallforschung, Germany
Authors: E. Barrena, Max-Planck-Institut fuer Metallforschung, Germany
D.G. de Oteyza, Max-Planck-Institut fuer Metallforschung, Germany
J.O. Osso, Institut de Ciencia de Materials de Barcelona, Spain
S. Sellner, Max-Planck-Institut fuer Metallforschung, Germany
H. Dosch, Max-Planck-Institut fuer Metallforschung, Germany
Correspondent: Click to Email
*Many organic devices like Light-Emitting Diodes (OLEDs), solar cells or ambipolar transistors rely on p-n junctions of organic semiconductors. Although numerous studies have been devoted to the characterization and optimization of the performance of p-n organic-based devices, the present-day knowledge on the physical principles of the growth of organic heterostructures is still poor. By combining atomic force microscopy with surface-sensitive X-ray diffraction, we have been able to get a detailed in-situ insight into the microscopic processes which take place during the growth of p-conducting di-indenoperylene (DIP) molecules onto n-conducting copper-hexadecafluorophtalocyanine (F16CuPc) thin films. We demonstrate the self-organization of well-ordered DIP nanodots with high crystallinity and show that their growth is intimately related to a novel type of interface reconstruction of the underlying F16CuPc film which affects three monolayers adjacent to the organic p-n interface. This self-organized nanopatterning of an organic p-n-junction opens new possibilities for organic electronic functions.