AVS 53rd International Symposium
    Surface Science Wednesday Sessions
       Session SS2+EM-WeA

Paper SS2+EM-WeA3
Organic Semiconductor Growth: Real-Time Observation of Growth Dynamics and Structural Evolution

Wednesday, November 15, 2006, 2:40 pm, Room 2004

Session: Organic Film Growth and Characterization
Presenter: S.M. Kowarik, University of Oxford, UK
Authors: S.M. Kowarik, University of Oxford, UK
A. Gerlach, Universitaet Tuebingen, Germany
S. Sellner, Universitaet Tuebingen, Germany
F. Schreiber, Universitaet Tuebingen, Germany
L. Cavalcanti, ESRF, France
O. Konovalov, ESRF, France
Correspondent: Click to Email
We use in-situ and real-time X-ray scattering during growth of the organic semiconductor diindenoperylene (DIP) to study the evolution of the film structure and morphology with time. Time resolved measurements in a broad q range, i.e. sampling a large number of Fourier components simultaneously, allow to directly measure (kinetically limited) growth dynamics and reveal transient structures which would be missed in post growth experiments. We identify structural and orientational transitions for the few-monolayer (ML) regime, as well as for thick (several 10's of ML) films. We show that the differences in the interaction of DIP with the substrate change the thickness as well as temperature range of the transitions, which include (transient) strain, subtle changes of the orientation, as well as complete reorientation. These effects should be considered rather general features of the growth of organics, which, with its orientational degrees of freedom, is qualitatively different from growth of inorganics. @FootnoteText@ S. Kowarik et al., Physical Review Letters, 96, 125504 (2006).