AVS 53rd International Symposium
    Surface Science Wednesday Sessions
       Session SS1-WeA

Paper SS1-WeA9
In-Situ Observation of Wet Oxidation Kinetics on Si(100) Surface Via Ambient Pressure X-ray Photoemission Spectroscopy

Wednesday, November 15, 2006, 4:40 pm, Room 2002

Session: Growth Processes on Metal and Semiconductor Surfaces
Presenter: M. Rossi, Lawrence Berkeley National Laboratory
Authors: M. Rossi, Lawrence Berkeley National Laboratory
B.S. Mun, Lawrence Berkeley National Laboratory
Y. Enta, Hirosaki University, Japan
C.S. Fadley, Lawrence Berkeley National Lab. & UC Davis
P.N. Ross, Lawrence Berkeley National Lab. & UC Davis
Z. Hussain, Lawrence Berkeley National Lab. & UC Davis
Correspondent: Click to Email
The initial stages of silicon water-based oxidation kinetics have been investigated as a function of temperature in the hundred milli-torr pressure range using photoemission spectroscopy. The formation of chemically-shifted states of the Si 2p core level was monitored in real time while exposing the surface to water vapour. Measured oxide growth rates are compared to several theoretical models and confirm the existence of a threshold temperature above 400@super o@C after which growth rates are significantly higher. In addition, the observed enhancement of the oxide thickness at temperature higher than 450@super o@C is consistent with previous works reporting the hydrogen desorption on the Si surface.