AVS 53rd International Symposium
    Surface Science Tuesday Sessions
       Session SS-TuP

Paper SS-TuP8
Temperature Dependant Evolution of Co Islands on Ag/Si(111)-@sr@3x@sr@3and Ag/Ge(111)-@sr@3x@sr@3

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Surface Science Poster Session
Presenter: S.L. Tsay, National Taiwan Normal University
Authors: S.L. Tsay, National Taiwan Normal University
C.L. Lin, Academia Sinica of China
T.Y. Fu, National Taiwan Normal University
Correspondent: Click to Email
Thermal evolution of Co islands on Ag/Ge(111) and Ag/Si(111) surfaces was studied by scanning tunneling microscopy and low energy electron diffraction. The Ag buffer layer with @sr@3x@sr@3 reconstruction can avoid alloy formation of Co and Ge or Si during annealing below 800K. The morphology of 0.35ML Co on the Ag/Ge(111) surface transfers dispersion of clusters to nucleation of 2D islands. The 2D islands with @sr@13x@sr@13R14° reconstruction form after 573K annealing. Anneal to above 573K, the 2D islands grow up and the higher islands are reconstructed by 2x2. Submonolayer Co on Ag/Si(111) surfaces can not form 2D islands. The Co clusters just become larger as annealing temperature increases. However, 2x2 phase can be found on 1.8ML Co/Ag/Si(111) surfaces after 673K annealing. The different growth behaviors of Co atoms on Ag/Si(111) and Ge(111) surfaces are discussed from different structure factors.