AVS 53rd International Symposium
    Surface Science Thursday Sessions
       Session SS-ThP

Paper SS-ThP1
The Study of the Silicon Oxide Growth Modes with Ambient-Pressure X-Ray Photoelectron Spectroscopy

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Surface Science Poster Session
Presenter: B.S. Mun, Lawrence Berkeley National Laboratory
Authors: B.S. Mun, Lawrence Berkeley National Laboratory
Y. Enta, Hirosaki University, Japan
M. Rossi, Lawrence Berkeley National Laboratory
K. Lee, Seoul National University, Korea
S.-K. Kim, Seoul National University, Korea
P.N. Ross, Lawrence Berkeley National Laboratory
C.S. Fadley, Lawrence Berkeley National Lab. & UC Davis
Z. Hussain, Lawrence Berkeley National Laboratory
Correspondent: Click to Email
The growth rates of silicon oxide and the nature of the chemical bonding at the oxide interface have been investigated at ambient pressures of oxygen and water up to 1 torr in real time. The growth rates of silicon oxidation at various substrate temperatures and gases pressures of oxygen and water have been monitored. In the case of oxygen (a dry oxidation process), the growth rate of oxide is very rapid up to the thickness of one monolayer and this is followed by a second fast regime up to ca. 2 nm oxide thickness, after which the reaction rate slows considerably. In the case of water (a wet oxidation process), the growth rates of oxide become significantly slower compared to the dry process. Qualitative theoretical modeling is presented to explain the difference between dry and wet oxidation processes.