AVS 53rd International Symposium
    Advanced Surface Engineering Thursday Sessions
       Session SE-ThP

Paper SE-ThP11
Influence of the Normalized Ion Flux on the Constitution of Al@sub 2@O@sub 3@ Films Deposited by Plasma Assisted Chemical Vapor Deposition

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Advanced Surface Engineering Poster Session
Presenter: J.M. Schneider, RWTH Aachen, Germany
Authors: D. Kurapov, RWTH Aachen, Germany
J. Reiss, RWTH Aachen, Germany
D.H. Trinh, Linköping University, Sweden
L. Hultman, Linköping University, Sweden
J.M. Schneider, RWTH Aachen, Germany
Correspondent: Click to Email
Al@sub 2@O@sub 3@ thin films were deposited onto tempered hot working steel substrates from an AlCl@sub 3@-O@sub 2@-Ar-H@sub 2@ gas mixture by plasma assisted chemical vapor deposition (PACVD). During deposition the normalized ion flux was varied through changes in the precursor content while keeping the cathode voltage and the total pressure constant. As the precursor content in the total gas mixture was increased the deposition rate resulting in an increased normalized ion flux from 50 to 480. The constitution, morphology, impurity incorporation and the elastic properties of the alumina thin films were found to be normalized ion flux dependent. These normalized ion flux induced changes in structure composition and properties may be understood by considering surface and bulk diffusion related mechanisms.