AVS 53rd International Symposium
    Nanometer-scale Science and Technology Wednesday Sessions
       Session NS-WeA

Paper NS-WeA9
Damage-free Surface Modification of Carbon Nanotubes using Advanced Neutral Beam

Wednesday, November 15, 2006, 4:40 pm, Room 2020

Session: Nanotube Devices and Processes
Presenter: K. Okumura, Tohoku University, Japan
Authors: K. Okumura, Tohoku University, Japan
Y. Sato, Tohoku University, Japan
K. Tohji, Tohoku University, Japan
S. Samukawa, Tohoku University, Japan
Correspondent: Click to Email
In an effort to realize carbon nanotube (CNT) FET, it is necessary to modify electric characteristic of grown CNTs by using plasma process. However, the conventional plasma process damages CNTs because charged particles and ultraviolet photons are irradiated to the CNTs. As a result, the CNT FET could not be practically fabricated using conventional plasma processes. Here, we have proposed damage free surface modification by using our developed neural beam to resolve the problems and to practically fabricate the CNT FET without any damages. Neutral beam can almost eliminate irradiation of charged particles and ultraviolet photons to CNTs. In this study, we irradiated Ar plasma and Ar neutral beam to single-walled carbon nanotubes (SWCNTs). Raman spectra confirmed that the intensity ratio of D-band/G-band in SWCNTs irradiated by neutral beam was still kept at the same as that with no beam irradiation. Conversely, the intensity ratio of D-band/G-band was drastically increased by conventional plasma irradiation. Transmission electron microscopy could also confirm that SWCNTs did not have any damages after the neutral beam irradiation, whereas SWCNTs was destroyed by conventional plasma irradiation. Neutral beam process is very promising candidate for future CNT FET fabrication processes.