AVS 53rd International Symposium
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuA

Paper NS-TuA6
Electrical Properties of Graphene Ribbon Transistors

Tuesday, November 14, 2006, 3:40 pm, Room 2016

Session: Nanoscale Devices and Detection
Presenter: Z. Chen, IBM T.J. Watson Research Center
Authors: Z. Chen, IBM T.J. Watson Research Center
X. Du, Rutgers the State University of NJ
M.J. Rooks, IBM T.J. Watson Research Center
Ph. Avouris, IBM T.J. Watson Research Center
Correspondent: Click to Email
Carbon nanotube has caught much attention due to its exceptional physical properties and potential for future nano-electronic applications. Graphene, a single layer of graphite, has similar chemical composition and crystal structures as the carbon nanotube, while at the same time shows semi-metallic behavior. It is proposed that, with intentional size and edge control graphene ribbons can be fabricated and viewed as an unrolled single wall carbon nanotube. The important question however is, whether the right boundary conditions can be introduced to generate quantization and result in semiconducting band gaps. Here we present a study on the electrical properties of the graphene ribbon transistors with various widths. Edge modification and measurements under different conditions will be discussed as well.