AVS 53rd International Symposium
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuA

Paper NS-TuA4
Characterization of Ga-Acceptor Nanoscale Wires in Si

Tuesday, November 14, 2006, 3:00 pm, Room 2016

Session: Nanoscale Devices and Detection
Presenter: S.J. Robinson, University of Illinois at Urbana-Champaign
Authors: S.J. Robinson, University of Illinois at Urbana-Champaign
J.R. Tucker, University of Illinois at Urbana-Champaign
T. Schenkel, Lawrence Berkeley National Laboratory
T.-C. Shen, Utah State University
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The prospect of using focused ion beams (FIBs) as maskless implants has gained popularity since the inception of the FIB. In particular, nanoscale interconnects and quantum devices could be defined by implantation of dopant atoms into semiconductors. We have used a FEI dual beam Strada 235 FIB at LBNL to fabricate high-density Ga wires in Si substrates to study the transport properties and practicality of these wires. Under similar annealing conditions, we find that these wires have considerably higher sheet resistance than conventional Ga implants and often show non-linear I-Vs. Concurrently, our analysis of the transport properties of these wires shows variable range hopping (in conjunction with the Efros-Shklovskii Coulomb gap) to be the most likely conduction mechanism at low temperatures. Our focus is determining whether high-conductivity, ohmic wires can be realized at liquid He temperatures by varying implant densities and annealing conditions. In addition to transport measurements, we also obtained AFM images to investigate surface morphologies after implantation and annealing. This work is supported by NSF-NIRT and the Molecular Foundry at LBNL.