AVS 53rd International Symposium
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuA

Paper NS-TuA3
Single-Crystal/Amorphous Si-SiO2 Multilayer Systems and Devices based on Si Nanomembranes

Tuesday, November 14, 2006, 2:40 pm, Room 2016

Session: Nanoscale Devices and Detection
Presenter: W. Peng, University of Wisconsin-Madison
Authors: W. Peng, University of Wisconsin-Madison
M.M. Roberts, University of Wisconsin-Madison
F.S. Flack, University of Wisconsin-Madison
E.P. Nordberg, University of Wisconsin-Madison
D.E. Savage, University of Wisconsin-Madison
M.G. Lagally, University of Wisconsin-Madison
M.A. Eriksson, University of Wisconsin-Madison
Correspondent: Click to Email
Silicon-on-insulator (SOI) is widely used in device applications that require single-crystal Si but benefit from the isolation provided by a SiO2 substrate layer. Multiple layers of single-crystal Si interspersed by (amorphous) SiO2 are a natural next step for SOI devices. It is impossible to achieve such a system by growth techniques (one cannot grow single-crystal Si on SiO2), and multiple bonding steps, such as those used to create conventional SOI, would be prohibitively expensive. We demonstrate a novel method to fabricate such a multilayer Si-SiO2 system using transferred silicon nanomembranes@footnote 1@ and subsequent oxidation. The surface roughness and interface quality for the multilayer system is similar to prime SOI. We describe devices, including Bragg mirrors and resonant tunneling diodes that take advantage of the properties of repeated layers of single-crystal Si and amorphous SiO2. Extremely high reflectivity (~98%) is observed for Bragg reflectors with as few as four Si layers, as expected from the large dielectric contrast between the silicon and silicon-dioxide layers. @FootnoteText@ Supported by NSF, DOE, AFOSR.@footnote 1@ Roberts, M. M. et. al. Elastically relaxed free-standing strained-silicon nanomembranes. Nature Materials 5, 388-393 (2006).