AVS 53rd International Symposium
    Nanometer-scale Science and Technology Thursday Sessions
       Session NS-ThP

Paper NS-ThP30
Near IR Electroluminecsent Studies of ZnS Photonic Crystal

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Nanoscale Science and Technology Poster Session
Presenter: E.S. Law, University of Florida
Authors: E.S. Law, University of Florida
P.H. Holloway, University of Florida
N. Shepherd, University of North Texas
Correspondent: Click to Email
The effects of a photonic crystal on outcoupling of light from an alternating current thin film electroluminescent (ACTFEL) device is being studied. The ACTFEL device consists of a thin film of ZnS doped with erbium that was sputter deposited onto a glass substrate with an indium-tin-oxide (ITO) transparent conducting electrode and with an aluminum-titanium-oxide (ATO) thin insulating layer. Al top electrodes were vapor deposited on the ZnS:Er phosphor. For ZnS:Er, strong emission is observed at 1550nm. The photonic crystal was created in the ACTFEL device by etching away a hexagonal lattice of 264 nm diameter holes with 660nm lattice spacing. This pattern is expected to enhance the emission intensity perpendicular to the plane of the device. The photonic crystal pattern was created with electron-beam lithography using a PMMA resist over a complete ACTFEL device. A Cl@sub 2@/Ar reactive ion etch was used to etch through the Al top electrode layer with the PMMA as a mask. A CHF@sub 3@/H@sub 2@ /Ar reactive ion etch was used to etch through the ZnS:Er phosphor, with the Al layer now acting as the mask. The emissions of ACTFEL devices with and without the photonic crystal will be compared using an optical spectrometer.