AVS 53rd International Symposium
    Nanometer-scale Science and Technology Thursday Sessions
       Session NS-ThP

Paper NS-ThP29
Electronic Detection of AFP by Si-based Field Effect Transistor

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Nanoscale Science and Technology Poster Session
Presenter: W.S. Yun, Korea Research Institute of Standards and Science
Authors: N.H. Lee, Korea Research Institute of Standards and Science
H.J. Park, Korea Research Institute of Standards and Science
W.-J. Kim, Korea Research Institute of Standards and Science
H.Y. Yu, Electronics and Telecommunications Research Institute, Korea
S. Lee, Electronics and Telecommunications Research Institute, Korea
H.-T. Kim, Kumoh National Institute of Technology, Korea
W.S. Yun, Korea Research Institute of Standards and Science
Correspondent: Click to Email
Lithographically-defined silicon nanowires were used in the detection of a cancer marker protein: alpha fetoprotein (AFP). Doped Si nanowires of 20 nm in thickness, 50 nm in width, and 10 @micron@ in length were fabricated on an insulating silicon oxide surface by e-beam lithography. On the surface of the nanowires, anti-AFP was immobilized by a series of chemical reactions. A μ-fluidic channel was then assembled onto the chip of the nanowires. When an aqueous solution of AFP (about 10 ng/ml in concentration) was introduced, the electric conductance along the nanowire changed its value by a factor of 2, which was attributed to the change in the local electric field felt by the semiconducting nanowire upon specific antibody-antigen binding. Since the Si nanowires in our work were defined by a lithographic technique, the fabrication of arbitrary-shaped and/or highly-integrated biosensors should become quite straightforward.