AVS 53rd International Symposium
    Nanometer-scale Science and Technology Thursday Sessions
       Session NS-ThP

Paper NS-ThP25
Annealing Effect of Electronic Properties for Tungsten Wires Fabricated by FIB and EB-CVD

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Nanoscale Science and Technology Poster Session
Presenter: A. Ozasa, University of Hyogo, Japan
Authors: A. Ozasa, University of Hyogo, Japan
K. Nakamatsu, University of Hyogo, Japan
R. Kometani, University of Hyogo, Japan
K. Kanda, University of Hyogo, Japan
Y. Haruyama, University of Hyogo, Japan
T. Kaito, SII NanoTechnology Inc.
S. Matsui, University of Hyogo, Japan
Correspondent: Click to Email
We present the temperature dependence of electrical properties for tungsten wires fabricated on four terminal Au electrodes by 30 kV FIB-CVD and 5 kV EB-CVD using W(CO)@sub 6@ source gas. The gap of center electrodes is 1µm. The tungsten wires has 4.8-µm-long and 300-nm linewidth. The tungsten wires fabricated by FIB-CVD contains Ga that is implanted by Ga ion beam irradiation. The tungsten wires deposited by FIB-CVD contain about 86% C, 0.6% O, 13% Ga and 0.3% W, which were measured by SEM-EDX. On the other hand, the deposited tungsten wires by EB-CVD contain about 96% C, 3% O and 1% W. We measured the temperature dependences of the resistances of the wires deposited by EB and FIB-CVD with a four-terminal method at 300-673 K. The measurement results indicate that the resistance decreased by annealing temperature raised for all wires deposited by FIB and EB-CVD. The resistance of tungsten wires deposited by FIB-CVD flatly decreased from 2.7 @ohm@ cm to 1.0 @ohm@ cm with increasing annealing temperature from 300 K to 673 K. On the other hand, the result of tungsten wires deposited by EB-CVD dramatically decreased from 144 k@ohm@ cm to 3.2 k@ohm@ cm with annealing temperature rise from 300 K to 673 K. Moreover, we examined in detail I-V measurement for both FIB and EB-CVD wires. As a result, non-linear I-V characteristics were observed for FIB and EB-CVD annealed wires. Especially, EB-CVD wires annealed over 673 K indicates significant semiconductor I-V characteristics.