AVS 53rd International Symposium
    Nanometer-scale Science and Technology Thursday Sessions
       Session NS-ThP

Paper NS-ThP24
Evaluation of Resolution for Free-Space-Wiring Fabricated by FIB-CVD

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Nanoscale Science and Technology Poster Session
Presenter: C. Minari, University of Hyogo, Japan
Authors: C. Minari, University of Hyogo, Japan
R. Kometani, University of Hyogo, Japan
K. Nakamatsu, University of Hyogo, Japan
K. Kanda, University of Hyogo, Japan
Y. Haruyama, University of Hyogo, Japan
T. Kaito, SII NonoTechnology, Japan
S. Matsui, University of Hyogo, Japan
Correspondent: Click to Email
Focused-ion-beam chemical-vapor-deposition (FIB-CVD) is the effective technology to fabricate 3-D nanostructure. FIB-CVD is promising in many fields such as mechanical device, optical device and bio device. Thus it is very important to refine FIB-CVD as 3-D nanostructure fabrication technology. This time, we examined the growth mechanism by FIB-CVD. We fabricated various line structures by changing a scan speed and an ion beam current with a single scanning of Ga+ ion beam. Acceleration voltage was 30kV, and phenanthrene (C10H14) was used as a source gas to deposit Diamond Like Carbon (DLC). First, we examined the resolution of DLC line patterns on Si substrate. It was observed that DLC linewidth became smaller, as Ga+ ion beam scan speed quickened. This is attributed to the Gaussian profile of Ga+ ion beam. The tip part of beam profile is effective to deposit at faster scan speed, on the other hand, at slower scan speed, both the tip and tail parts of beam profile are contributed. A 30nm linewidth was achieved on Si substrate at the scan speed of 0.8µm/s with a 0.1pA beam current (calculated beam diameter: 5nm). Next, we evaluated resolution of DLC free-space-wiring grown from the top of DLC wall made by FIB-CVD. A DLC line grows in space by controlling the scan speed, and performed as a free-space-wiring. When the beam scans slowly at a scan speed of 0.05µm/s using a beam current of 0.4pA (calculated beam diameter: 10nm), a free-space-wiring grows up from the top of DLC wall. In contrast, when the beam scans quickly at the scan speed of 0.07µm/s, an free-space-wiring grows downward from the top of DLC wall. In this experiment, the minimum linewidth of downward free-space-wiring was about 50nm and that of upward free-space-wiring was about 100nm.