AVS 53rd International Symposium
    Magnetic Interfaces and Nanostructures Tuesday Sessions
       Session MI-TuP

Paper MI-TuP4
Properties of LT-MBE Ga@sub 1-x@Mn@sub x@As Regrown on InGaP/GaAs Prepared Substrates

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Magnetic Interfaces and Nanostructures Poster Session
Presenter: J.S. Lee, Seoul National University, Korea
Authors: J.S. Lee, Seoul National University, Korea
H.K. Choi, Seoul National University, Korea
W.O. Lee, Seoul National University, Korea
Y.D. Park, Seoul National University, Korea
Correspondent: Click to Email
We report on the structural, magnetic, and transport properties of LT-MBE Ga@sub 1-x@Mn@sub x@As regrowth on MOCVD prepared GaAs(500 nm)/In@sub 1-y@Ga@sub y@P(500 nm)/GaAs(001) and In@sub 1-y@Ga@sub y@P(500 nm)/GaAs(001) substrates. In-situ RHEED indicate a layer-by-layer growth with typical 2 x 4 pattern during regrowth of a GaAs buffer layer preceding 1 x 2 pattern during 100 nm of Ga@sub 1-x@Mn@sub x@As. @theta@-2@theta@ HRXRD measurements show characteristic features for only the Ga@sub 1-x@Mn@sub x@As epilayers and In@sub 1-y@Ga@sub y@P/GaAs(001) substrate. SQUID magnetization measurements indicate magnetic ordering temperatures (T@sub C@'s) of regrown Ga@sub 1-x@Mn@sub x@As to be similar to Ga@sub 1-x@Mn@sub x@As/GaAs(001), with indications of an increase in in-plane uniaxial anisotropy field terms from BH loops measurements at 5 K with H || to (110) and (1-10). Similar to Ga@sub 1-x@Mn@sub x@As/GaAs(001), annealing at low temperatures (250°C for 1 hour) increases T@sub C@. Transport measurements show insulator-like behavior for as-grown samples with Mn content. For similar Mn content, Ga@sub 1-x@Mn@sub x@As/GaAs(001) show metallic-like behavior. We will also discuss realization of Ga@sub 1-x@Mn@sub x@As suspended NEMS and MEMS structures suitable for further investigations on the origins of magnetic ordering in Ga@sub 1-x@Mn@sub x@As diluted magnetic semiconductors.