AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThM

Paper EM-ThM9
Mobility Optimization Study of Organic Semiconductor Based Thin Film Transistors

Thursday, November 16, 2006, 10:40 am, Room 2001

Session: Organic Electronic Materials and Devices
Presenter: R.P. Shrestha, University of North Carolina at Chapel Hill
Authors: R.P. Shrestha, University of North Carolina at Chapel Hill
D. Yang, University of North Carolina at Chapel Hill
Y.X. Li, Shandong University, China
L. Yan, University of North Carolina at Chapel Hill
E.A. Irene, University of North Carolina at Chapel Hill
Correspondent: Click to Email
Optical and electronic properties of two spin cast organic semiconductors N,N '- bis (3-phenoxy-3-phenoxy-phenoxy) -1,4,5,8-naphthalenetetracarboxylic diimide (NDA) and poly (o-methoxyaniline) POMA have been previously reported. In this study, the effect of various process changes (annealing, dielectric layer, device geometry) on the mobility of organic thin film transistors (OTFT) fabricated using NDA and POMA is explored. Low dielectric constant (K), non-polar dielectric materials improved charge mobility as did judicious annealing and bottom contact geometry. For example, the initial mobility of 10-3 cm2 V-1 s-1 for POMA can be improved by an order of magnitude by using polyethylene (PE) (low K) and degraded using polyvinylidene trifluoroethylene P(VDF-TrFe) (high K) dielectric layers. Similar results are reported for NDA OTFTs. Other performance parameters such has turn-on/off ratio and threshold voltages are also reported for the devices.