AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThM

Paper EM-ThM8
Metallic Thin Films of Molecular Metals

Thursday, November 16, 2006, 10:20 am, Room 2001

Session: Organic Electronic Materials and Devices
Presenter: J. Fraxedas, Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Spain
Authors: I. Malfant, Laboratoire de Chimie de Coordination (CNRS), France
K. Rivasseau, Laboratoire de Chimie de Coordination (CNRS), France
D. de Caro, Laboratoire de Chimie de Coordination (CNRS), France
L. Valade, Laboratoire de Chimie de Coordination (CNRS), France
J. Fraxedas, Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Spain
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Intrinsically metallic molecular materials become in most cases activated semiconductors when prepared as thin films due to the formation of segregated domains, the so-called grains boundaries. The transport properties of such polycrystalline films are thus determined by the morphology of the films. Needless to say that there is tremendous interest in circumventing the extrinsic effects of grain boundaries in order to exploit the intrinsic physical properties of the pristine materials when targeting technological applications. We show two examples of truly metallic organic thin films (thickness ca. 4 µm) grown by electrocrystallization on silicon wafers of TTF-based molecular metals, where TTF stands for tetrathiafulvalene. Our first example is TTF[Ni(dmit)@sub 2@]@sub 2@, dmit = dithiolethionedithiolate. The films show a reversible metal-insulator transition at 12 K.@footnote 1@ The second example concerns the single-component neutral molecular metal Ni(tmdt)@sub 2@, tmdt = trimethylenetetrathiafulvalenedithiolate. The films exhibit a room temperature conductivity of ca. 100 S/cm.@footnote 2@ We confirm that electrocrystallization is the technique of choice to obtain metallic films of single- and multi-component organic materials and we pursue the preparation of superconducting films. @FootnoteText@@footnote 1@D. de Caro, J. Fraxedas, C. Faulmann, I. Malfant, J. Milon, J.- F. Lamère, V. Collière, L. Valade, Adv. Mater. 16, 835-838 (2004) @footnote 2@I. Malfant, K. Rivasseau, J. Fraxedas, Ch. Faulmann, D. de Caro, L. Valade, L. Kaboub, Jean-Marc Fabre, F. Senocq, J. Am. Chem. Soc. 128, 5612-5613 (2006).