AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThM

Paper EM-ThM2
Low Voltage Organic Field-Effect Transistors with High k Nanocomposite Dielectric Gate Insulator

Thursday, November 16, 2006, 8:20 am, Room 2001

Session: Organic Electronic Materials and Devices
Presenter: A. Rasul, Motorola Inc.
Authors: A. Rasul, Motorola Inc.
J. Zhang, Motorola Inc.
D. Gamota, Motorola Inc.
C.G. Takoudis, University of Illinois at Chicago
Correspondent: Click to Email
Solution processed nanocomposite dielectric material with a high dielectric constant was demonstrated as a gate insulator for organic electronics applications. A nanocomposite consisting of cross-linked Propylene Glycol Methyl Ether Acetate and Barium Titanate (BTO) nanoparticles was developed and utilized as the gate insulator. The high relative permittivity (k=35), bimodal nanocomposite utilized had two different filler particle sizes 200 nm and 1000 nm diameter particles. Bottom contact organic field-effect transistors (OFETs) were demonstrated using a combination of printing and spray coating technologies. A metal coated plastic film was used as the flexible gate substrate. An amorphous organic semiconductor was utilized as the active layer. OFETs with the solution processed nanocomposite dielectric had a high field-induced current and a low threshold voltage and thus a low operating voltage due to the high capacitance gate insulator. We review the characteristics of the nanocomposite material and discuss the processing and performance of the printed organic devices. To the knowledge of the authors, this nanocomposite has the highest reported dielectric constant of a solution processed gate insulating material for an OFET worldwide.