AVS 53rd International Symposium
    Electronic Materials and Processing Wednesday Sessions
       Session EM+MI-WeA

Paper EM+MI-WeA9
Effect of Growth Conditions on the Magnetic Properties of GaGdN

Wednesday, November 15, 2006, 4:40 pm, Room 2003

Session: Magnetic Semiconductors
Presenter: J.K. Hite, University of Florida
Authors: J.K. Hite, University of Florida
R.M. Frazier, University of Florida
R.P. Davies, University of Florida
G.T. Thaler, University of Florida
C.R. Abernathy, University of Florida
S.J. Pearton, University of Florida
J.M. Zavada, Army Research Office
Correspondent: Click to Email
Due to the increasing interest in spintronics, many attempts have been made at incorporating spin-based technology into the existing semiconductor technology, with a recent focus on rare earth doped GaN. GaGdN layers were grown by gas source MBE under a broad range of thicknesses and Gd cell temperatures. Magnetic measurements obtained using a SQUID magnetometer showed ferromagnetic behavior at room temperature. Magnetization of the material was dependent both on dopant cell temperature and crystalline quality. The Gd concentration was under the detection limit of secondary ion mass spectroscopy, and from the highly insulating nature of the films is estimated to be on the order of 10@super 16@ atom/cm@super 3@. In addition, the GaGdN films were also co-doped with Si at varying Si cell temperatures. In contrast to GaGdN, the co-doped material was conductive, with resistivities reaching 0.04 @ohm@-cm. Room temperature ferromagnetism was also retained, some of which exceeded that of the singly doped films. No evidence of second phases was seen in x-ray diffraction. These materials may be useful in the development of devices such as magnetic tunnel junctions and spin valves. This work is supported by the Army Research Office under W911-NF-04-10296.