| AVS 52nd International Symposium | |
| Electronic Materials and Processing | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | EM2-TuM1 Invited Paper Characterization of High-@kappa@ Materials using High Resolution Ion Backscattering T. Gustafsson, E. Garfunkel, L.V. Goncharova, R. Barnes, D. Starodub, Rutgers University |
| 9:00am | EM2-TuM3 Fermi Level Pinning at Re/HfO@sub2@ Interface and Effective Work Function of Re in Re/HfO@sub2@/SiO@subx@/n-Si Stack Y. Liang, J. Curless, C. Tracy, D. Gilmer, J. Schaeffer, D. Triyoso, P. Tobin, Freescale Semiconductor Inc. |
| 9:20am | EM2-TuM4 Oxygen Diffusion and Reduction of Interfacial Layer in high-k Metal Oxide Gate Stacks L.V. Goncharova, Rutgers University, M. Dalponte, Universidade Federal do Rio Grande do Sul, Brazil, T. Gustafsson, E. Garfunkel, Rutgers University |
| 9:40am | EM2-TuM5 Invited Paper Characterization of High- and Low-k Dielectrics Materials using Secondary Ion Mass Spectrometry J. Bennett, ATDF |
| 10:20am | EM2-TuM7 Combined Electrical and Morphological Characterization of Al@sub 2@O@sub 3@ Films by Non-Contact AFM J.M. Sturm, A.I. Zinine, H. Wormeester, R.G. Bankras, J. Holleman, J. Schmitz, B. Poelsema, University of Twente, The Netherlands |
| 10:40am | EM2-TuM8 The Effect of Surface Pre-treatment upon the Growth of Hafnium Dioxide Layers on Silicon P. Mack, R.G. White, J. Wolstenholme, Thermo Electron, UK, T. Conard, IMEC, Belgium |
| 11:00am | EM2-TuM9 Atomic Layer Deposition and Characterization of Hafnium and Aluminum Oxides and Hafnium Aluminates on Silicon R.R. Katamreddy, A. Deshpande, University of Illinois at Chicago, R. Inman, A. Soulet, G. Jursich, American Air Liquide, C.G. Takoudis, University of Illinois at Chicago |
| 11:20am | EM2-TuM10 Measurement of Thicknesses of HfO@sub 2@, HfSiO@sub 4@, ZrO@sub 2@, and ZrSiO@sub 4@ Films on Silicon by Angle-Resolved XPS W. Smekal, W.S.M. Werner, Vienna University of Technology, Austria, C.J. Powell, National Institute of Standards and Technology |