AVS 52nd International Symposium
    Electronic Materials and Processing Thursday Sessions

Session EM2-ThA
Dilute Nitrides and Small Bandgap Semiconductors

Thursday, November 3, 2005, 2:00 pm, Room 310
Moderator: R. Ahrenkiel, University of Denver


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:00pm EM2-ThA1 Invited Paper
Narrow Band Gap Group III-Nitrides
W. Walukiewicz, Lawrence Berkeley National Laboratory
3:00pm EM2-ThA4
Electronic Properties of GaAsN Quantum Wells
S. Turcotte, N. Shtinkov, J.-N. Beaudry, École Polytechnique de Montréal, Canada, G. Bentoumi, Université de Montréal, Canada, R.A. Masut, École Polytechnique de Montréal, Canada, R. Leonelli, Université de Montréal, Canada, P. Desjardins, École Polytechnique de Montréal, Canada
3:20pm EM2-ThA5 Invited Paper
High-Performance, Lattice-Mismatched GaInAs
M.W. Wanlass, National Renewable Energy Laboratory
4:00pm EM2-ThA7
Comparison of a Dominant Electron Trap in n-Type and p-Type GaNAs Using Deep-Level Transient Spectroscopy
S.W. Johnston, S.R. Kurtz, National Renewable Energy Laboratory