AVS 52nd International Symposium
    Thin Films Friday Sessions
       Session TF-FrM

Paper TF-FrM8
Enhanced Properties of IZO Films Deposited on Polymeric Substrate Using Ion-beam Assisted Sputtering for Organic Light-emitting Diode

Friday, November 4, 2005, 10:40 am, Room 306

Session: Thin Films on Flexible and Polymer Substrates
Presenter: H.C. Pan, National Applied Research Laboratories, Taiwan, R.O.C.
Authors: H.C. Pan, National Applied Research Laboratories, Taiwan, R.O.C.
C.Y. Su, National Applied Research Laboratories, Taiwan, R.O.C.
C.N. Hsiao, National Applied Research Laboratories, Taiwan, R.O.C.
Y.-S. Chiu, National Tsing Hua University, Taiwan, R.O.C.
J.-H. Jou, National Tsing Hua University, Taiwan, R.O.C.
Correspondent: Click to Email
Zn-doped In@sub 2@O@sub 3@ (IZO) thin films with 5 and 10 wt.% Zn content were prepared on polymeric polyethylene terephthalate (PET) substrate using ion-beam assisted deposition (IBAD) at room temperature. A 15 nm-thick SiO@sub 2@ films were therefore deposited prior to IZO films on PET substrate act as passivation layer to prevent the movement of impurity from underneath layer. The deposited IZO films show amorphous structures with highly electrical conductivity, optical transmittance and surface smoothness on the PET substrate. The 10 wt.% IZO films deposited in a pure Ar atmosphere without IBAD show low resistivity of about 8x10@super -4@ @ohm@-cm, comparable to that of 5 wt.% IZO films (2x10@super -3@ @ohm@-cm). It is found that increase of IZO film thickness leads a high electrical conductivity and decrease of energy band gap regardless of the Zn content of IZO films. The IZO surface morphology increased smoothness with increasing the ion-beam voltage, while the 5 and 10 wt.% IZO film showed a surface roughness variation ranging from 1.7 nm to 1.5 nm and 2.1 nm to 1.5 nm, respectively. Both trends are consistent with more energetic growth condition that enhances the surface diffusion. The energetic contribution of ions with applied 90 V improves the crystallinity of 5 wt.% IZO thin films as shown by a (222)-diffraction peak in the XRD examination. The 5 wt.% IZO films exhibiting higher conducting distribution uniformity with IBAD was characterized using conducting atomic force microscopy (CFAM). The Al/Alq@sub 3@/IZO/SiO@sub 2@/PET stacks were evaluated for flexible organic light-emitting diode (OLED). OLED were fabricated with both 5 and 10 wt.% IZO film electrodes, and the OLED devices with 5 wt.% IZO electrode showed improved electrical performance due to its crystalline than that of 10 wt.% IZO films.